Materials Page
Terminology
Reference 4

SiO2 (Silicon Dioxide)

l (nm)	n
300	1.52
400	1.49
550	1.46
1000	1.44

Bulk Properties

Quartz
Melting Point: 1610 ºC
Density: 2.635 - 2.660 gm/cc
Young's Modulus:
11.1 x 10^⁷ psi - perpendicular to c axis
14.1x10^⁷ psi - parallel to c axis

Fused
Melting Point: 1710 ºC
Density: 2.17 -2.20 gm/cc
Young's Modulus:
1.06 x 10^⁷ psi

Film Properties

Evap. Temp.: 1600 ºC
Film Growth: Amorphous
Film Hardness: Hard

Common uses: Multilayer coatings. Insulating layer. Antireflection coatings.

Comments: High deposition rates or low substrate temperature produce stresses, underdense films.